B2B marketplace · Technology-grade grown diamond
B2B marketplace · Technology-grade grown diamond
An ultra-wide bandgap semiconductor for higher voltages, faster switching and less energy loss.
01
In next-generation high-voltage and high-frequency power electronics, tech-grade synthetic diamond is utilized both as an ultra-wide bandgap (UWBG) semiconductor material and as an advanced substrate for solid-state power switching devices. It is implemented in high-voltage Schottky barrier diodes (SBDs), field-effect transistors (FETs, including MOSFETs and MESFETs), grid-level power converters, electric vehicle traction inverters, and aerospace power distribution modules. Integrated directly into high-power circuits, diamond active layers handle extreme voltage gradients, high current densities, and elevated operating temperatures without electrical breakdown or thermal failure, performing low-loss AC-to-DC and DC-to-DC energy conversion.
02
Diamond is recognized as the ultimate semiconductor material because its Baliga’s Figure of Merit (BFOM)—which quantifies power handling efficiency—is orders of magnitude higher than that of silicon (Si), silicon carbide (SiC), and gallium nitride (GaN). Combining an ultra-wide bandgap (5.47 eV), an unprecedented dielectric breakdown electric field (10 MV/cm), high carrier mobility, and the highest thermal conductivity of any known material (2,200 W/m · K), diamond semiconductors operate at vastly higher voltages, faster switching speeds, and ambient temperatures exceeding 300°C. This drastically reduces power conversion energy losses, slashes passive component sizes, and eliminates heavy liquid cooling loops.
03
Semiconductor-grade applications demand ultra-high-purity single-crystal Chemical Vapor Deposition (scCVD) diamond substrates with low dislocation densities (< 103 cm−2) to prevent leakage currents and premature dielectric breakdown. Power devices utilize high-purity electronic-grade scCVD substrates combined with controlled boron-doped p-type epitaxial layers (or hydrogen-terminated surface conductive layers enabling two-dimensional hole gas transport). Precise crystallographic orientation ({100} or {111} faces), sub-nanometer surface polishing (Ra < 0.5 nm), and engineered metallization contacts (such as Ti/Pt/Au or Zr/Pt/Au) are required to form low-resistance Ohmic and high-barrier Schottky interfaces.
Key figure
5.47 eV
Ultra-wide bandgap, with a 10 MV/cm dielectric breakdown field
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